Samsung Electronics Co., Ltd. today announced that it has developed the
industry’s first 40-nanometer (nm) memory device. The new 32
Gigabit (Gb) NAND flash device is the first memory to incorporate a
Charge Trap Flash (CTF) architecture, a revolutionary new approach to
further increase manufacturing efficiency while greatly improving
The new CTF-based NAND flash memory increases the reliability of the
memory by sharply reducing inter-cell noise levels. Its surprisingly
simple structure also enables higher scalability, which will eventually
improve manufacturing process technology from 40 nm to 30 and even 20nm.
In each 32Gb device, the control gate in the CTF is only 20 percent as
large as a conventional control gate in a typical floating gate
structure. With CTF, there is no floating gate. Instead, the data is
temporarily placed in a “holding chamber” of the
non-conductive layer of the flash memory composed of silicon nitride
(SiN). This results in a higher level of reliability and better control
of the storage current.
The CTF design is enabled through the use of a TANOS structure
comprised of tantalum (metal), aluminum oxide (high k material),
nitride, oxide and silicon. The use of a TANOS structure marks the
first application of a metal layer coupled with a high k material to
the NAND device.
The TANOS CTF architecture, which serves as the foundation of the 40nm
32Gb CTF NAND flash announced today, was developed after extensive
research of the Samsung Semiconductor R&D department. Samsung
first revealed the TANOS structure through a paper at the 2003
International Electron Devices Meeting (IEDM).
The new 32Gb CTF memory was announced at the sixth annual Samsung press
conference in Seoul.
Introduction of a 40nm manufacturing process for 32Gb NAND flash marks
the seventh generation of NAND flash that follows the New Memory Growth
Theory of double-density growth every 12 months, which was first
presented by Dr. Chang Gyu Hwang, president and CEO of Samsung
Electronics’ Semiconductor Business in a keynote address at